features low cost diffused junction low leakage low forward voltage drop high current capability and similar solvents mechanical data c a s e : j e d e c d o - 15 , m o l d ed p l a s t i c terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode w e i g h t : 0.014 ounces0.39 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. rgp 10d rgp 10g rgp 10j rgp 10k rgp 10m units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr 250 ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. rgp10a (z) - - - rgp10m (z) do - 15 50 35 50 rgp 10a easily cleaned with freon,alcohol,isopropanol 100 70 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- + 150 - 55---- + 150 50 150 15 i r 30.0 10.0 200.0 1.3 500 voltage range: 50 --- 1000 v current: 1.0 a 100 rgp 10b 1.0 a f a s t r e c o v e r y r e c t i f i e r s i f(av) the plastic material carries u/l recognition 94v-0 dimensions in millimeters www.diode.kr diode semiconductor korea
-1.0a -0.25a 0 +0.5a t rr 1cm pulse generator (note2) d.u.t. 1 n.1. 50 n.1. oscilloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) t j -1 00 t j -2 5 t j -7 5 0.01 0 0.1 1.0 10 20 40 60 1 0 0 80 120 140 1 0 . 1 1 0 . 4 10 100 10 20 5 2 50 0 . 2 2 4 4020 100 t j =25 f=1mh z 0.5 0.7 0.9 1.1 1.3 1.5 0.04 0.1 0.4 1.0 1.2 1.4 2.0 10 t j =25 pulse width=300 www.diode.kr diode semiconductor korea
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